BYD57DA Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – ULTRA-FAST SOFT-RECOVERY CONTROLLED AVALANCHE RECTIFIERS

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYD57DA - BYD57VA
ULTRA-FAST SOFT-RECOVERY
CONTROLLED AVALANCHE RECTIFIERS
PRV : 200 - 1400 Volts
Io : 1.0 - 1.2 Amperes
FEATURES :
* Glass passivated junction chip
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
2.0 ± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I_R = 0.1 mA
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)
Maximum Repetitive Peak Forward Current at Ttp = 85 °C
Maximum Forward Voltage at I_F = 1.0 A ; T_J = 25 °C
Maximum Reverse Current at V_R =V_RRMmax
T_J = 25 °C
T_J = 165 °C
Maximum Reverse Recovery Time (Note 4)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 5)
Junction Temperature Range
Storage Temperature Range
BYD BYD BYD BYD BYD BYD BYD
SYMBOL
UNIT
57DA 57GA 57JA 57KA 57MA 57UA 57VA
V_RRM 200 400 600 800 1000 1200 1400 V
V_R
200 400 600 800 1000 1200 1400 V
V_(BR)R-min 300 500 700 900 1100 1300 1500 V
I_F(AV)
1.0 ⁽¹⁾
0.4⁽²⁾
1.2 ⁽¹⁾
A
I_FSM
5
A
I_FRM
8.5
11
A
V_F
3.6
2.3
V
I_R
5.0
μA
I_R(H)
100
μA
Trr
30
75
150
ns
Rth j-tp
30
K/W
Rth j-a
150
K/W
T_J
T_STG
- 65 to + 175
°C
- 65 to + 175
°C
Notes :
(1) Ttp = 85 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6.
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6.
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; V_R = V_RRMmax
(4) Reverse Recovery Test Conditions : I_F = 0.5 A, I_R = 1.0 A, Irr = 0.25 A.
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 μm.
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Rev. 00 : February 13, 2008