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BYD37DA Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYD37DA - BYD37MA AVALANCHE FAST SOFT-RECOVERY
RECTIFIER DIODES
PRV : 200 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* Glass passivated junction chip.
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
2.0 ± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA
Maximum Average Forward Current Ttp = 105 °C (Note 1)
Maximum Non-Repetitive Peak Forward Surge Current (Note 2)
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage at 1.0 A
Maximum Reverse Current at VR =VRRMmax
TJ = 20 °C
TJ = 165 °C
Maximum Reverse Recovery Time (Note 3)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 4)
Junction Temperature Range
Storage Temperature Range
SYMBOL BYD BYD BYD BYD BYD UNIT
37DA 37GA 37JA 37KA 37MA
VRRM
200 400 600 800 1000 V
VR
200 400 600 800 1000 V
V(BR)R-min 300 500 700 900 1100 V
IF(AV)
1.5
A
IFSM
20
A
IFRM
12
A
VF
1.3
V
IR
1.0
μA
IR(H)
100
μA
Trr
250
300
ns
Rth j-tp
30
K/W
Rth j-a
120
K/W
TJ
TSTG
- 65 to + 175
°C
- 65 to + 175
°C
Notes :
(1) Averaged over any 20 ms period.
(2) t=10ms half sine wave; Tj = Tjmax prior to surge; VR = VRRMmax
(3) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 μm.
Page 1 of 2
Rev. 02 : February 29, 2008