BYD167A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – ULTRA FAST LOW-LOSS RECTIFIER

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYD167A
PRV : 600 Volts
Io : 2.0 Amperes
ULTRA FAST LOW-LOSS RECTIFIER
SMA (DO-214AC)
1.1 ± 0.3
FEATURES :
* Glass passivated junction chip
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
SYMBOL
VALUE
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current (Note 1)
Maximum Non-Repetitive Peak Forward Surge Current (Note 2)
Maximum Forward Voltage at I_F = 1.0 A, T_J = 25 °C
Maximum Reverse Current at V_R = V_RRMmax
T_J = 25 °C
T_J = 150 °C
Maximum Reverse Recovery Time (Note 3)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 4)
Junction Temperature Range
Storage Temperature Range
V_RRM
V_R
I_F(AV)
I_FSM
V_F
I_R
I_R(H)
Trr
Rth j-tp
Rth j-a
T_J
T_STG
600
600
2.0
25
1.25
5.0
150
50
30
150
- 65 to + 175
- 65 to + 175
Notes :
(1) Ttp = 70 °C; averaged over any 20 ms period; see Fig. 1
(2) t=10ms half sine wave; Tj = Tjmax prior to surge; V_R = V_RRMmax
(3) Reverse Recovery Test Conditions :_FI = 0.5 A, I_R = 1.0 A, Irr = 0.25 A.
(4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-laye≥r40 μm.
UNIT
V
V
A
A
V
μA
μA
ns
K/W
K/W
°C
°C
Page 1 of 2
Rev. 00 : February 13, 2008