BYD13D Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – CONTROLLED AVALANCHE RECTIFIER DIODES

BYD13D - BYD13M
PRV : 200 - 1000 Volts
Io : 1.4 Amperes
CONTROLLED AVALANCHE
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Minimum Reverse Avalanche Breakdown Voltage
Maximum Reverse Avalanche Breakdown Voltage
Maximum Average Forward Current T_tp = 55°C
Maximum Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage drop per Diode at IF = 1.0 A
Maximum DC reverse Current TJ = 25 °C
at rated DC Block Voltage
TJ = 165 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
V(BR)R-min
V(BR)R-max
IF(AV)
IFSM
VF
IR
IR(H)
TJ
TSTG
BYD
13D
200
140
200
225
1600
BYD
13G
400
280
400
450
1600
BYD
13J
600
420
600
650
1600
1.4
BYD
13K
800
560
800
900
1600
20
1.05
1
100
175
- 65 to + 175
BYD
13M
1000
700
1000
1100
1600
UNIT
V
V
V
V
V
A
A
V
µA
µA
°C
°C
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Rev. 02 : March 25, 2005