BY550-50_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

BY550-50 ~ BY550-1000
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
SILICON RECTIFIER DIODES
DO - 201AD
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
BY550 BY550 BY550 BY550 BY550 BY550
- 50 - 100 - 200 - 400 - 600 - 800
50 100 200 400 600 800
35 70 140 280 420 560
50 100 200 400 600 800
BY550
- 1000
1000
700
1000
UNIT
V
V
V
IF
5.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
300
1.1
20
50
50
18
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005