BR602L Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIER

BR602L
SILICON BRIDGE RECTIFIER
PRV : 200 Volts
BR6L
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.16 grams
0.158 (4.00)
0.142 (3.60)
0.445 (11.30)
0.405 (10.30)
AC
0.127 (3.20)
0.047 (1.20)
AC
0.511 (13.0)
0.354 (9.0)
0.27 (6.9)
0.23 (5.8)
0.62 (15.75)
0.58 (14.73)
0.042 (1.06)
0.038 (0.96)
0.433 (11.0)
0.275 (7.0)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current Tc=50°C
IF(AV)
Peak Forward Surge Current,
Single half sine wave Superimposed
IFSM
on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I²t
Maximum Forward Voltage per Diode at IF =3 A.
VF
Maximum DC Reverse Current Ta = 25 °C
IR
at Rated DC Blocking Voltage Ta = 100 °C
IR(H)
Typical Thermal Resistance (Note 1)
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
VALUE
200
140
200
6.0
200
64
1.0
10
200
8.0
- 40 to + 150
- 40 to + 150
UNIT
V
V
V
A
A
A²S
V
μA
μA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
Page 1 of 2
Rev. 03 : March 24, 2005