BR600_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

BR600 - BR610
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR6
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.158 (4.00)
0.142 (3.60)
0.445 (11.30)
0.405 (10.30)
AC
0.127 (3.20)
0.047 (1.20)
AC
0.62 (15.75)
0.58 (14.73)
0.042 (1.06)
0.038 (0.96)
0.27 (6.9)
0.23 (5.8)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
RATING
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700
V
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc=50°C
IF(AV)
6.0
A
Peak Forward Surge Current,
Single half sine wave Superimposed
IFSM
200
A
on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I²t
64
A²S
Maximum Forward Voltage per Diode at IF =3 A. VF
1.0
V
Maximum DC Reverse Current Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
RθJC
8.0
°C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005