BR600 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

BR600 - BR610
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR6
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.158 (4.00)
0.142 (3.60)
0.445 (11.30)
0.405 (10.30)
AC
0.127 (3.20)
0.047 (1.20)
AC
0.62 (15.75)
0.58 (14.73)
0.042 (1.06)
0.038 (0.96)
0.27 (6.9)
0.23 (5.8)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc=50°C
IF(AV)
6.0
Amps.
Peak Forward Surge Current,
Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
Current Squared Time at t < 8.3 ms.
I²t
200
Amps.
64
A²S
Maximum Forward Voltage per Diode at IF =3 A. VF
1.0
Volts
Maximum DC Reverse Current Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
IR(H)
RθJC
200
µA
8.0
°C/W
Operating Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 40 to + 150
°C
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
UPDATE : APRIL 23, 1998