BR1001S Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

BR1001S
PRV : 100 Volts
Io : 6.0 Ampere
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic tecnique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
SILICON BRIDGE RECTIFIERS
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
+
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.77 (19.56)
0.73 (18.54)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Reverse Voltage
Maximum Average Forward Rectified Current Ta=40°C
Maximum Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage drob per diode at IF = 9.0 A
Maximum Repetitive Peak Reverse Current
Typical Thermal Resistance at Junction to Ambient ( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VR
IF(AV)
IFSM
VF
IRRM
RθJA
TJ
Tstg
VALUE
100
70
100
6.0
200
1.0
10
1.8
-40 to + 150
-40 to + 150
UNIT
V
V
V
A
A
V
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to ambient with units mounted on a 100cm² x 1.5 t Al. plate.
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Rev. 02 : March 25, 2005