BR1000_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
0.290 (7.36)
0.210 (5.33)
AC
0.77 (19.56)
0.73 (18.54)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70
140 280 420 560 700
V
VDC
50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
IF(AV)
IFSM
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
10
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
A
A
A²S
V
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
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Rev. 02 : March 24, 2005