BR1000 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
0.290 (7.36)
0.210 (5.33)
AC
0.77 (19.56)
0.73 (18.54)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800 1000 Volts
Maximum RMS Voltage
VRMS
35
70
140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000 Volts
Maximum Average Forw ard Current Tc=55°C
IF(AV)
10
Amp.
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forw ard Voltage per Diode at IF = 5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amp.
A²S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998