BAX12 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Controlled avalanche diode

Certificate TH97/10561QM
Certificate TW00/17276EM
BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns
* Continuous reverse voltage: max. 90V
* Repetitive peak reverse voltage: max. 90V
* Repetitive peak forward current: max.800 mA
* Repetitive peak reverse current: max.600mA
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
MAXIMUM RATINGS
DO - 35
0.079(2.0 )max.
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Square wave: Tj = 25 °C prior to surge
Total Power Dissipation , Ta = 25 °C
Repetitive Peak Reverse Current
Junction Temperature
Storage Temperature Range
t = 1 μs
t = 100 μs
t = 10 ms
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
I_RRM
T_J
T_S
Value
90
90
400
800
55
15
9
450
600
200
-65 to + 200
Note : (1) Device mounted on an FR4 printed circuit-board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Parameter
Reverse Avalanche
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
BAX12
BAX12A
Reverse Recovery Time
Symbol
V_(BR)R
I_R
V_F
Cd
Trr
Test Condition
I_R = 1mA
I_R = 0.1mA
V_R = 90 V
V_R = 90 V, Tj = 150 °C
I_F = 400 mA
f = 1MHz ; V_R = 0
I_F = 30mA , I_R = 30mA
R_L = 100 Ω measured at
I_R = 3 mA
Min.
120
120
-
-
-
-
-
Max.
170
170
100
100
1.25
35
50
Unit
V
V
mA
A
A
mW
mA
°C
°C
Unit
V
V
nA
μA
V
pF
ns
Page 1 of 2
Rev. 01 : October 15, 2007