BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
BAS70/-04/-05/-06
PRV : 70 Volts
Io : 200 mA
FEATURES :
* These diodes feature very low turn-on voltage
* Fast switching
* These devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAS70 Marking Code : 73
* BAS70-04 Marking Code : 74
* BAS70-05 Marking Code : 75
* BAS70-06 Marking Code : 76
BAS70
3
1
2
SMALL SIGNAL SCHOTTKY
DIODE, SINGLE & DUAL
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
0.100
0.013
3.10
2.70
3
1
2
1.02
2.04
0.89
1.78
Dimensions in millimeters
BAS70-04
3
1
2
BAS70-05
3
1
2
BAS70-06
3
1
2
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS ( Ta = 25 °C, unless otherwise specified)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Forward Continuous Current
Maximum Peak Forward Surge Current at tp < 1 s
Total Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
I_F
I_FSM
P_tot
R_Ó¨JA
T_J
T_STG
Value
70
70
70
200⁽¹⁾
600⁽¹⁾
200⁽¹⁾
430⁽¹⁾
125
-65 to +150
Unit
V
V
V
mA
mA
mW
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, unless otherwise specified.
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage
(Note 2)
Diode Capacitance
Reverse Recovery Time
Test Condition
I_R = 10 µA (pulses)
V_R = 50 V
I_F = 1.0 mA
I_F = 15 mA
V_R = 0 V, f = 1 MHz
I_F = 10 mA , I_R = 10 mA,
Irr = 1A , R_L = 100 Ω
Symbol
V_(BR)
I_R
V_F
V_F
C_tot
Trr
Notes :
(1) Device on fiberglass substrate
(2) Pulse test tp < 300 µs
Min.
70
-
-
-
-
-
Page 1 of 1
Typ.
-
20
-
-
1.5
-
Max.
-
100
410
1
2
5
Unit
V
nA
mV
V
pF
ns
Rev. 01 : May 23, 2006