BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

Certificate TH97/10561QM
Certificate TW00/17276EM
BAS19,BAS20,BAS21
PRV : 120 - 250 Volts
I_O : 200 mA
FEATURES :
* Small plastic SMD package
* Switching speed: max. 50 ns
* General application
* Continuous reverse voltage: max. 100V, 150V, 200V
* Repetitive peak reverse voltage: max. 120V, 200V, 250V
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAS19 Marking Code: HA
* BAS20 Marking Code: HB
* BAS21 Marking Code: HC
HIGH VOLTAGE
SWITCHING DIODES
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
3.10
2.70
3
1
2
0.100
0.013
1.02
2.04
0.89
1.78
3
bottom view
1
2
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current (Note 1)
Maximum Non-repetitive Peak Forward Current
(square wave; Tj = 25 °C prior to surge)
Total Power Dissipation (Note 1)
Thermal Resistance Junction to Tie-point
Thermal Resistance Junction to Ambient
Junction Temperature Range
Storage Temperature Range
t = 1 µs
t = 100 µs
t = 10 ms
Symbol
V_RRM
V_R
I_F
I_FSM
P_tot
R_{th j-tp}
R_{th j-a}
T_J
T_STG
BAS19 BAS20 BAS21
120
200
250
100
150
200
200
9
3
1.7
250
330
500
150
-65 to +150
Unit
V
V
mA
A
mW
K/W
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.
Parameter
Forward Voltage
Reverse Current
Capacitance
Reverse Recovery Time
Test Condition
I_F = 100 mA
I_F = 200 mA
V_R = V_Rmax
V_R = V_Rmax, Tj = 150 °C
V_R = 0 V, f = 1 MHz
I_F = 30 mA to I_R = 30mA,
R_L =100 Ω,measure at I_R =3 mA
Symbol BAS19
V_F
I_R
C_D
Trr
Note : (1) Device mounted on an FR4 printed circuit board.
BAS20
1.00
1.25
100
100
5
50
BAS21
Unit
V
nA
µA
pF
ns
Page 1 of 2
Rev. 01 : May 22, 2006