ABR5000_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE BRIDGE RECTIFIERS

ABR5000 - ABR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
AVALANCHE BRIDGE
RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL ^ABR
5000
VRRM
50
VRMS
35
VDC
50
VBO(min.) 100
VBO(max.) 550
IF(AV)
ABR
5001
100
70
100
150
600
ABR
5002
200
140
200
250
700
ABR
5004
400
280
400
450
900
50
ABR
5006
600
420
600
700
1150
IFSM
400
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
660
1.1
10
200
1
- 50 to + 150
- 50 to + 150
ABR
5008
800
560
800
900
1350
ABR
5010
1000
700
1000
1100
1550
UNIT
V
V
V
V
V
A
A
A²S
V
µA
µA
°C/W
°C
°C
Note : 1 ) Thermal resistance from junction to case with units mounted on heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005