ABR3500W Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE BRIDGE RECTIFIERS

ABR3500W - ABR3510W
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Pb / RoHS Free
AVALANCHE BRIDGE
RECTIFIERS
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
ABR
3500W
ABR
3501W
ABR
3502W
ABR
3504W
ABR
3506W
ABR
3508W
ABR
3510W
UNIT
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC
50
100 200 400 600 800 1000 V
VBO(min.) 100 150 250 450 700 900 1100 V
VBO(max.) 550 600 700 900 1150 1350 1550 V
IF(AV)
35
A
IFSM
400
A
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
660
1.1
10
200
1.5
- 40 to + 150
- 40 to + 150
A²S
V
µA
µA
°C/W
°C
°C
Note :
1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate.
Page 1 of 2
Rev. 02 : March 24, 2005