ABR2500W Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE BRIDGE RECTIFIERS

ABR2500W - ABR2510W
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
AVALANCHE BRIDGE
RECTIFIERS
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 12.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL ^{ABR ABR ABR ABR ABR ABR ABR} UNIT
2500W 2501W 2502W 2504W 2506W 2508W 2510W
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC
50 100 200 400 600 800 1000 V
VBO(min.) 100
150
250
450
700
900 1100 V
VBO(max.) 550
600
700
900 1150 1350 1550 V
IF(AV)
25
A
IFSM
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.45
- 50 to + 150
- 50 to + 150
A
A²S
V
µA
µA
°C/W
°C
°C
Note :
1 ) Thermal resistance from Junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm x 15.2cm x 12.4 cm) Al. plate.
Page 1 of 2
Rev. 02 : March 24, 2005