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ABR1500W Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE BRIDGE RECTIFIERS
ABR1500W - ABR1510W
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
BR50W
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 12.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL ABR ABR ABR ABR ABR ABR ABR
1500W 1501W 1502W 1504W 1506W 1508W 1510W
VRRM
50 100 200 400 600 800 1000
VRMS
35
70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
VBO(min.) 100 150 250 450 700 900 1100
VBO(max.) 550 600 700 900 1150 1350 1550
IF(AV)
15
UNIT
V
V
V
V
V
A
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.9
- 50 to + 150
- 50 to + 150
A
A2S
V
µA
µA
°C/W
°C
°C
Note : 1) Thermal resistance from Junction to case with units mounted on a 5" x 4" x 3" (12.7cm x 10.2cm x 7.3 cm) Al.-Finned plate.
Page 1 of 2
Rev. 02 : March 24, 2005