A2W005G_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS

A2W005G - A2W10G
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
AVALANCHE GLASS PASSIVATED
BRIDGE RECTIFIERS
WOB
FEATURES :
* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ ^AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current
0.375" (9.5 mm) lead length Tc = 50°C
Maximum Peak Forward Surge Current
Single half sine wave, Superimposed on rated load
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
VBO(min.)
VBO(max.)
A2W
005G
50
35
50
100
550
A2W
01G
100
70
100
150
600
A2W
02G
200
140
200
250
700
A2W
04G
400
280
400
450
900
A2W
06G
600
420
600
700
1150
A2W
08G
800
560
800
900
1350
A2W
10G
1000
700
1000
1100
1550
UNIT
V
V
V
V
V
IF(AV)
2.0
A
IFSM
I²t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
50
10
1.0
10
1.0
24
36
- 50 to + 150
- 50 to + 150
A
A²S
V
µA
mA
pf
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
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Rev. 02 : March 25, 2005