1SS165 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER DIODES

1SS165
FEATURES :
• Low forward voltage
• High breakdown voltage
• Low diode capacitance.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.11g
SCHOTTKY BARRIER DIODES
DO - 34 Glass
0.063 (1.6 )max.
Cathode
Mark
0.022 (0.55)max.
1.00 (25.4)
min.
0.119 (3.04)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Reverse Voltage
V_R
Average Rectified Current
I_o
Power Dissipation
P_D
Junction Temperature
T_J
Storage temperature range
T_stg
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Value
10
15
150
100
-55 to + 100
Unit
V
mA
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage
I_R
V_R = 10 V
V_R = 2 V
V_F
I_F = 1 mA
I_F = 10 mA
Diode Capacitance
Forward Voltage Deviation
Cd
V_R = 0V, f = 1MHz
∆V_F
I_F = 10 mA
Min
Typ
Max
Unit
-
-
10
µA
-
-
0.2
µA
365
-
430
mV
520
-
600
mV
-
-
1.0
pF
-
-
±5
mV
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Rev. 02 : March 24, 2005