1SR35-100 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

1SR35-100 ~ 1SR35-400
SILICON RECTIFIER DIODES
PRV : 100 - 400 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current at VR = VRRM
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
1SR35-100
100
70
100
IF(AV)
1SR34-200
200
140
200
1.0
1SR34-400
400
280
400
UNIT
V
V
V
A
IFSM
VF
IRM
TJ
TSTG
30
A
1.1
V
10
µA
- 65 to + 175
°C
- 65 to + 175
°C
Page 1 of 2
Rev. 02 : March 25, 2005