1SR139-100 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

1SR139-100 ~ 1SR139-600
SILICON RECTIFIER DIODES
PRV : 100 - 600 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current at VR = VRRM
Junction Temperature Range
Storage Temperature Range
SYMBOL 1SR139-100 1SR139-200 1SR139-400 1SR139-600 UNIT
VRRM
100
200
400
600
V
VRMS
70
140
280
420
V
VDC
100
200
400
600
V
IF(AV)
1.0
A
IFSM
VF
IRM
TJ
TSTG
40
A
1.1
V
10
µA
- 65 to + 175
°C
- 65 to + 175
°C
Page 1 of 2
Rev. 02 : March 25, 2005