1SR124-100A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

1SR124-100A ~ 1SR124-400A
PRV : 100 - 400 Volts
Io : 1.0 Ampere
FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
1SR124
-100
100
1SR124
-200
200
1SR124
-400
400
UNIT
V
Maximum RMS Voltage
VRMS
70
140
280
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
VDC
100
200
400
V
IF(AV)
1.0
A
IFSM
35
A
VF
1.3
V
Maximum DC Reverse Current
Ta = 25 °C
IR
5
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
50
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
250
ns
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
Storage Temperature Range
TJ
- 65 to + 150
°C
TSTG
- 65 to + 150
°C
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 25, 2005