1SR124-100 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

1SR124-100 ~ 1SR124-400
PRV : 100 - 400 Volts
Io : 1.0 Ampere
FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I_F = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
SYMBOL
V_RRM
V_RMS
V_DC
I_F(AV)
1SR124
- 100
100
70
100
1SR124
- 200
200
140
200
1.0
1SR124
- 400
400
280
400
I_FSM
35
V_F
1.3
I_R
5
I_R(H)
50
Trr
250
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C_J
T_J
T_STG
50
- 65 to + 150
- 65 to + 150
Notes :
(1) Reverse Recovery Test Conditions : I_F = 0.5 A, I_R = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V_DC
UNIT
V
V
V
A
A
V
µA
µA
ns
pF
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005