1S1885 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

1S1885 ~ 1S1888
PRV : 100 ~ 600 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
SILICON RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1S1885 1S1886 1S1887 1S1888
Maximum Repetitive Peak Reverse Voltage
VRRM
100
200
400
600
Maximum Average Forward Current Ta = 65 °C
IF
1.0
Maximum Peak One Cycle Surge Forward Current
IFSM
(Non-repetitive)
60 (50Hz)
66 (60Hz)
Maximum Forward Voltage at I F = 1.5 A.
VF
1.2
Maximum Repetitive Peak Reverse Current
IR
10
(VRRM = Rated)
IR(H)
400 (Tj = 150 °C)
Maximum Thermal Resistance (Junction to Ambient)
Junction Temperature Range
R_{th (j-a)}
TJ
100
- 40 to + 150
Storage Temperature Range
TSTG
- 40 to + 150
UNIT
V
A
A
V
μA
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005