1N5913A_06 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

Certificate TH97/10561QM
Certificate TW00/17276EM
1N5913A - 1N5957A
V_Z : 3.3 - 240 Volts
P_D : 3 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Maximum Steady state Power Dissipation
@ T_L = 75 ºC, Lead Length = 3/8"
Derate above 75 ºC
Steady State Power Dissipation
@ T_L = 50 ºC, Lead Length = 3/8"
Derate above 50 ºC
Operating and Storage Temperature Range
SILICON ZENER DIODES
DO - 41
0.108(2.74)
0.079 (1.99)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Symbol
P_D
P_D
T_J,T_STG
Value
3.0
24
1.0
6.67
- 65 to + 200
Unit
W
mW/ºC
W
mW/ºC
°C
Fig. 1 POWER TEMPERATURE DERATING CURVE
5
4
L = 3/8"
3
L = 1/8"
L = LEAD LENGTH
TO HEAT SINK
2
L = 1"
1
0
0
40 80 120 160 200
TL, LEAD TEMPERATURE (°C)
Page 1 of 2
Rev. 07 : May 27, 2006