1N5817_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

1N5817 - 1N5819
PRV : 20 - 40 Volts
IO : 1.0 Ampere
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
* Pb / RoHS Free
0.107 (2.74)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.312 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length at TL = 90 °C
Maximum Peak Forward Surge Current,
8.3ms single half sine wave
Superimposed on rated load (JEDEC Method) TL = 70 °C
Maximum Forward Voltage at IF = 1.0 A
Maximum Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage (Note 1) Ta = 100 °C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
1N5817
20
14
20
IF(AV)
1N5818
30
21
30
1.0
1N5819
40
28
40
IFSM
VF
IR
IR(H)
RθJL
CJ
TJ
TSTG
25
0.45
0.55
0.60
1.0
10
15
110
- 65 to + 125
- 65 to + 125
UNIT
V
V
V
A
A
V
mA
mA
°C/W
pF
°C
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
(2) Thermal Resistance from junction to lead, PC board Mounting with 0.375" (9.5mm) Lead Lengths and 1.5 in²
(38.1mm²) copper pads.
(3) Measured at 1 MHz and applied reverse voltage of 4.0 volts.
Page 1 of 2
Rev. 02 : March 25, 2005