1N5817WB Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5817WB - 1N5819WB
PRV : 20 - 40 Volts
IO : 1.0 Ampere
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER DIODES
SOD-123
2.7
2.6
MECHANICAL DATA :
* Case : SOD-123
* Weight : 0.01 gram (approximately)
* 1N5817WB Marking Code : A0
* 1N5818WB Marking Code : ME
* 1N5819WB Marking Code : SR
Absolute Maximum Rating (Ta = 25 °C)
Parameter
DC Reverse Voltage
Average Rectified Output Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
1N5817WB
1N5818WB
1N5819WB
3.9
3.7
Dimensions in millimeters
Symbol
V_R
I_O
P_tot
T_J
T_STG
Value
20
30
40
1.0
450
-55 to + 150
-55 to + 150
Unit
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25 °C )
Parameter
Symbol Min
Reverse Breakdown Voltage
1N5817WB
20
at I_R = 1 mA
1N5818WB
V_BR
30
1N5819WB
40
Reverse Leakage Current
Forward Voltage
at V_R = 20 V 1N5817WB
-
at V_R = 30 V 1N5818WB
-
at V_R = 40 V 1N5819WB
I_R
-
at V_R = 4 V 1N5819WB
-
at V_R = 6 V 1N5819WB
-
at I_F = 0.1 A 1N5819WB
-
at I_F = 1.0 A 1N5817WB
-
1N5818WB
-
1N5819WB
V_F
-
at I_F = 3.0 A 1N5817WB
-
1N5818WB
-
1N5819WB
-
Diode Capacitance at V_R = 4 V, f = 1MHz
C_D
-
Page 1 of 1
Typ
Max
Unit
-
-
-
-
V
-
-
-
1
-
1
-
1
mA
-
0.050
-
0.075
-
0.45
-
0.45
-
0.55
-
0.60
V
-
0.750
-
0.875
-
0.900
-
120
pF
Rev. 01 : August 22, 2006