1N5807US Datasheet, PDF (1/2 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

Certificate : TH97/10561QM
Certificate : TW00/17276EM
1N5807US - 1N5811US
PRV : 50 - 150 Volts
Io : 6.0 Amperes
ULTRAFAST RECOVERY
RECTIFIER DIODES
SMB (DO-214AA)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ultrafast recovery time
* Pb / RoHS Free
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Forward Surge Current ⁽³⁾
Maximum Peak Forward Voltage at I_F = 4.0 A.
Maximum Reverse Current at V_RWM
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time ⁽⁴⁾
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
SYMBOL
V_RWM
V_BR(Min)
I_F(AV)
I_FSM
V_F
I_R
I_R(H)
Trr
R_Ó¨JL
T_J
T_STG
1N5807US 1N5809US 1N5811US
50
100
150
60
110
160
6.0 ⁽¹⁾
3.0 ⁽²⁾
125
0.875
5.0
150
30
22
- 65 to + 175
- 65 to + 175
UNIT
V
V
A
A
V
μA
ns
°C/W
°C
°C
Notes :
(1) Rated at T_L=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for T_L above 75 °C.
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where T_J(max) dose not exceed 175 °C.
(3) Ta = 25 °C @ I_F(AV) = 3A and V_RWM for ten 8.3 ms surges at 1 minute intervals.
(4) I_F = 1A, I_RM = 1A, I_R(REC) = 0.1 A and di/dt = 10 A/μs min.
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Rev. 00 : April 4, 2007