1N5711 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

1N5711 and 1N6263
V_RRM : 70V , 60V
FEATURES :
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
• This diode is also available in the MiniMELF case with
type designation LL5711 and LL6263.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10 µs Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
1N5711
1N6263
Symbol
V_RRM
P_D
I_FSM
R_θJA
T_J
T_S
Value
70
60
400⁽¹⁾
2
0.3⁽¹⁾
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Unit
V
mW
A
°C/mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Diode Capacitance
Reverse Recovery Time
Note:
1N5711
1N6263
1N5711
1N6263
V_(BR)R
I_R
V_F
Cd
Trr
I_R = 10 µA
V_R = 50 V
I_F = 1mA
I_F = 15mA
V_R = 0 V, f = 1MHz
I_F = I_R = 5mA,
recover to 0.1I_R
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..
Min
Typ
Max
Unit
70
-
-
V
60
-
-
-
-
200
nA
-
-
0.41
V
-
-
1.0
-
-
2.0
pF
-
-
2.2
-
-
1
ns
Page 1 of 2
Rev. 02 : March 24, 2005