1N5614 Datasheet, PDF (1/1 Pages) General Semiconductor – GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER

Certificate TH97/10561QM
Certificate TW00/17276EM
1N5614 - 1N5622
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.161 (4.1)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 50 μA
Maximum Average Forward Current at Ta = 55 °C
at Ta = 100 °C
Peak Forward Surge Current
(Ta = 100 °C,f = 60 Hz, I_F(AV) = 750 mA for ten 8.3 ms
surges @ 1 minute intervals)
Minimum Forward Voltage at I _F = 3.0 A
Maximum Forward Voltage at I_F = 3.0A
Maximum Reverse Current at V_RWM, Ta = 25 °C
at V_RWM, Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT
V_RWM
200
400
600
800
1000
V
V_BR(MIN)
220
440
660
880
1100
V
1.0
I_F(AV)
A
0.75
I_FSM
30
A
V_F(MIN)
V_F(MAX)
I_R
I_R(H)
Trr
R_Ó¨JL
T_J, T_STG
0.8
1.3
0.5
25
2.0
38
-65 to +175
V
V
μA
μs
°C/W
°C
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
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Rev. 02 : July 24, 2006