1N4531 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4531 ~ 1N4532
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current:max. 450 mA.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.11g
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
HIGH SPEED SWITCHING DIODES
DO - 34 Glass
0.078 (2.0 )max.
Cathode
Mark
0.017 (0.43)max.
1.00 (25.4)
min.
0.118 (3.0)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specifie.d)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Repetitive Peak Forward Current
Maximum Power Dissipation ⁽¹⁾
Maximum Surge Forward Current at t < 1s, Tj = 25 °C
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_RM
I_F
I_FRM
P_D
I_FSM
T_J
T_S
Value
75
75
200
450
500
0.5
200
-65 to + 200
Unit
V
V
mA
mA
mW
A
°C
°C
Electrical Characteristics (Tj = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ Max Unit
Reverse Current
Forward Voltage
1N4531
1N4532
V_R = 20 V
-
I_R
V_R = 20 V , Tj = 150 °C
V_R = 50 V
-
-
V_R = 50 V , Tj = 150 °C
-
V_F
I_F = 10 mA
-
-
25
nA
-
5
μA
-
100
nA
-
100
μA
-
1
V
Diode Capacitance
1N4531
1N4532
Cd
f = 1MHz ; V_R = 0
-
-
4.0
pF
-
-
2.0
Reverse Recovery Time
1N4531
1N4532
I_F = 10 mA to I_R = 60mA
Trr
R_L = 100 Ω ; Measured
-
-
4
ns
at I_R = 1 mA
-
-
2
ns
Page 1 of 2
Rev. 03 : December 3, 2008