1N4245 Datasheet, PDF (1/1 Pages) Powerex Power Semiconductors – Passivated Rectifier

Certificate TH97/10561QM
Certificate TW00/17276EM
1N4245 - 1N4249
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 200 - 1000 Volts
M1A
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.085(2.16)
0.075(1.91)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100 μA
Maximum Average Forward Current at Ta = 55 °C
Peak Forward Surge Current
8.3 ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I_F = 3.0 A
Maximum Reverse Current at V_RWM, Ta = 25 °C
at V_RWM, Ta = 150 °C
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249 UNIT
V_RWM
200
400
600
800
1000
V
V_BR(MIN)
240
480
720
960
1150
V
I_F(AV)
1.0
A
I_FSM
25
A
V_F
I_R
I_R(H)
Trr
R_Ó¨JL
T_J, T_STG
1.3
1.0
150
5.0
42
-65 to +175
V
μA
μs
°C/W
°C
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
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Rev. 03 : November 2, 2006