1N4148S Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH SPEED SWITCHING DIODE

1N4148S
PRV : 100 Volts
Io : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.093g
HIGH SPEED SWITCHING DIODE
DO - 34 Glass
0.078 (2.0 )max.
Cathode
Mark
0.019 (0.50)max.
1.00 (25.4)
min.
0.118 (3.0)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation , Ta = 25 °C
Maximum Forward Voltage at IF = 10 mA
Maximum Reverse Current
at VR = 20V
at VR = 75V
at VR = 20V, Tj = 150°C
Maximum Voltage Rise when switching ON
test with 50mA Pulses
tp = 0.1µs, Rise Time <30ns fp = 5 to 100kHz
Maximum Reverse Recovery Time
from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
VRRM
VR
IF(AV)
IFSM
PD
VF
IR
Vfr
Trr
RθJA
TJ
TSTG
100
V
75
V
150 ¹⁾
mA
500
mA
500
mW
1.0
V
25
nA
5
µA
50
µA
2.5
V
4
ns
350 ¹⁾
K/W
175
°C
- 65 to + 175
°C
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
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Rev. 02 : March 25, 2005