1N4001G_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N4001G - 1N4007G
BY133G
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
1N 1N 1N 1N 1N 1N 1N
SYMBOL _{4001G 4002G 4003G 4004G 4005G 4006G 4007G}
VRRM 50 100 200 400 600 800 1000
VRMS
35
70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
BY
133G
1300
910
1300
UNIT
V
V
V
IF(AV)
1.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005