1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

1N4001G - 1N4007G ^{GLASS PASSIVATED JUNCTION}
BY133G
SILICON RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
SYMBOL ^{1N 1N 1N 1N 1N 1N 1N BY} UNIT
4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G
VRRM 50 100 200 400 600 800 1000 1300 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 910 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 1300 Volts
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IF(AV)
IFSM
1.0
Amp.
30
Amps.
Maximum Forward Voltage at IF = 1.0 Amp.
VF
1.0
Volts
Maximum DC Reverse Current Ta = 25 °C
IR
5.0
µA
at rated DC Blocking Voltage Ta = 100 °C IR(H)
50
µA
Typical Junction Capacitance (Note1)
CJ
8
pF
Typical Thermal Resistance (Note2)
RθJA
45
°C/W
Junction Temperature Range
TJ
- 65 to + 175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998