1B4B42 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS)

1(B,G,J)4B42
PRV : 100 ~ 600 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated Lead solderable per MIL-STD-
202, Method 208
* Polarity : Polarity symbols marked on body
* Mounting position : Any
* Weight : 0.42 gram
SILICON BRIDGE RECTIFIER
DFM
0.255(6.5)
0.245(6.2)
~
~
0.315(8.00)
0.285(7.24)
0.335(8.51)
0.320(8.12)
0.255(6.5)
0.245(6.2)
0.122(3.10)
0.100(2.60)
0.045(1.14)
0.035(0.89)
0.185(4.69)
0.150(3.81)
0.205(5.2)
0.195(5.0)
0.350(8.9)
0.300(7.6)
0.0130(0.33)
0.0086(0.22)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
60 Hz, resistive or inductive load.
RATING
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Output Current
Maximum Peak One Cycle Surge Forward
Current ( Non-Repetitive )
Maximum Instantaneous Forward Voltage
per element at IF = 1.0 A
Maximum Repetitive Peak Reverse Current
at VRRM = Rated
Maximum Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
VRRM
IF(AV)
IFSM
VF
IR
RθJA
TJ
TSTG
1B4B42
100
1G4B42
400
1.0
30 ( 50Hz )
33 ( 60Hz )
1.0
10
75
- 40 to + 150
- 40 to + 150
1J4B42
600
UNIT
V
A
A
V
µA
°C/W
°C
°C
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Rev. 02 : March 25, 2005