1B4B1 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

1(B,G,J)4B1
PRV : 100 - 600 Volts
Io : 1.5 Ampere
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ ^AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Output Rectified Current, Ta = 50°C
Maximum Peak One Cycle Surge Forward Current
(Non Repetitive)
Maximum Forward Voltage at IF = 1.5 A
Maximum Repetitive Peak Reverse Current
at VRRM = Rated, Tj = 150°C
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IF(AV)
IFSM
VF
IRRM
Tj
TSTG
1B4B1
100
1G4B1
400
1.5
50 (50 Hz)
55 (60 Hz)
1.2
0.4
-40 to +150
-40 to +150
1J4B1
600
UNIT
V
A
A
V
mA
°C
°C
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Rev. 02 : March 25, 2005