11E1 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

11E1 - 11E6
PRV : 100 - 600 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 40°C
Maximum Peak Forward Surge Current
Maximum Forward Voltage at IF = 1.0 A
Maximum Reverse Current at V_R = V_RRM
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF
IFSM
VF
IRM
TJ
TSTG
11E1 11E2 11E4 11E6
100
200
400
600
70
140
280
420
100
200
400
600
1.0
45
1.0
50
10
- 65 to + 175
- 65 to + 175
UNIT
V
V
V
A
A
V
µA
°C
°C
Page 1 of 2
Rev. 04 : October 3, 2005