10A01 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 10A RECTIFIER

10A01-10A07
SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* Diffused Junction
* High current capability and Low Forward
Voltage Drop
* Surge Overload Rating to 600A Peak
* Low Reverse Leakage Current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.049 grams
D6
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current (Note 1) Ta = 50°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single half sine wave superimposed on rated load
(JEDEC Method)
Maximum Forward Voltage at IF = 10 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note 2)
Thermal Resistance
Operating and Storage Temperature Range
V_RRM
50
V_RMS
35
V_DC
50
I_O
I_FSM
V_F
I_R
I_R(H)
Cj
R_θJC
T_J, T_STG
Notes :
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.
100 200 400 600
70 140 280 420
100 200 400 600
10
600
1.3
10
100
150
0.8
- 65 to + 150
800 1000 V
560 700
V
800 1000 V
A
A
V
µA
µA
80
pF
°C/W
°C
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Rev. 01 : October 27, 2005