RVF Datasheet, PDF (2/2 Pages) Electronic devices inc. – FAST RECOVERY - HIGH VOLTAGE HIGH CURRENT SILICON RECTIFIERS

RVF
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
600
100
500
400
RVF 5-15
75
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC
1.0SEC
300
50
200 ^{RVF 20-40}
25
100
0
25
50 75 100 125 150 175
AMBIENT TEMP^{( OC )}
0
1
2 3 4 5 6 7 8 9 10
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
20 30 40 50 60
A
E
LTR
INCHES MILLIMETERS
A
.051 DIA.
1.30 DIA.
B
+_ _.03
+_ _{. 7 6}
L +_ B
C
C
2.0 MIN.
50.8 MIN.
D
D
0.31 MAX.
7.9 MAX.
E
0.76 MAX. 19.30 MAX.
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
FIG.4
TEST CIRCUIT
TYPICAL REVERSE RECOVERY WAVEFORM
T _RR
0.5A
ZERO
REFERENCE
R1
50 OHM
D.U.T.
-
R2
SCOPE
1 OHM
PULSE
GENERATOR
1.0A
0.25A
R1,R2 _{NON-INDUCTIVE RESISTORS}
PULSE GENERATOR - HEWLETT
PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
Prior to the manufacture of these assemblies, the individual silicon junction is measured for
maximum recovery time in the test circuit shown.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
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