VT1000 Datasheet, PDF (1/2 Pages) Electronic devices inc. – HIGH VOLTAGE 50 mA SILICON RECTIFIERS

HIGH VOLTAGE 50 mA
SILICON RECTIFIERS
VT RVT
SMALL SIZE MOLDED PACKAGE
PRV 10,000 TO 15,000 VOLTS
FAST RECOVERY (R_SERIES)
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI
Type
PRV
Volts
REVERSE RECOVERY TIME
(Fig.4)
VT1000
VT1200
VT1500
RVT1000
RVT1200
RVT1500
10,000
12,000
15,000
10,000
12,000
15,000
-
-
-
100 ns max.
100 ns max.
100 ns max.
ELECTRICAL CHARACTERISTICS (at T_A=25 ^oC Unless Otherwise Specified)
Average Rectified Forward Current @ 50^oC, IO
Max. Peak Surge Current, I_FSM (8.3ms)
Max. Forward Voltage Drop @ 50 mA, V_F
Max. DC Reverse Current @ PRV and 25^oC, I_R
Max. DC Reverse Current @ PRV and100^oC, I_R
Ambient Operating Temperature Range, T_A
Storage Temperature Range, T_STG
50 mA
5 Amp
28Volts
1A
25 ^A
-55 to + 125^oC
-55 to + 150^oC
NOTES:
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and
soldering point to prevent damage from excess heat.
2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
EDI reservesthe rightto changethese specificationsat any time withoutnotice.