TVR30 Datasheet, PDF (1/2 Pages) Electronic devices inc. – HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE - TVR 30

TVR30
HIGH VOLTAGE FAST RECOVERY
SILICON DIODE FOR CRT APPLICATIONS
TYPE - TVR30
This high voltage fast recovery diode was developed for assembly or encapsulation and
is intended primarily for use as a building block in the assembly of high voltage circuits
for black / white TV and similar service.
ABSOLUTE MAXIMUM RATINGS
Peak Reverse Voltage - Repetitive
* Average Forward Current
* Peak Forward Current - Repetitive
** Operating Temperature
Storage Temperature Range
V_RWM max.
I_F(AV)max.
I_{FRM max.}
T_A
T_STG
30,000 Volts
10 mA
200 mA
+100 ^oC
-55 ^oC to +150 ^oC
*Pulse rectifier service -TV deflection system, duty cycle approximately 15% of one
horizontal cycle. Approximately 10 sec at a repetition rate of 15,750 Hz
**See Figure 2 (over)
ELECTRICAL CHARACTERISTICS (@ T_A=25 ^oC, Unless Otherwise indicated.)
Forward Voltage VF@IF =5 mA
* Reverse Current IR @ V_R =30KV
* Reverse Current @ T_A =100 ^oC, IR @ V_R =30KV
45V max.
1uA max.
10uA max.
Reverse Recovery time (Fig.3) trr
100 nanosec max.
Max. Surge Current
3A
* ^{Tested in suitable dielectric medium}
EDI reserves the right to change these specifications at any time without notice.