RC05 Datasheet, PDF (1/2 Pages) Electronic devices inc. – FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER

RC
FAST RECOVERY 200 NANOSECOND
SILICON RECTIFIER
SMALL SIZE
LOW LEAKAGE
HIGH TEMPERATURE STABILITY
HIGH SURGE CAPABILITY
EDI
Type
RC05
RC10
RC20
RC40
RC60
RC80
RC100
PRV
Volts
50
100
200
400
600
800
1000
Maximum Reverse
RECOVERY TIME
IN NANOSECONDS
(Fig.4)
200
200
200
200
200
200
200
ELECTRICAL CHARACTERISTICS(at T_A=25^oC Unless Otherwise Specified)
Average Rectif ied Forward Current @ 50^oC, IO
1 Amp
Max. Peak Surge Current , IFSM (8.3 ms)
Max. Forward Voltage Drop @ 1 Amp, V_F
Max. DC Reverse Current @ P RV and 25 ^oC, I_R
Max. DC Reverse Current @ PRV and100 ^oC, I_R
Trr (Reverse Recovery time), Fig. 4
Ambient Operating Temperature Range, T_A
Storage Temperature Range, T_STG
50 Amp
1.4V olts
1A
50 ^A
200 nanosec Max
125nanosec Typical
-55 ^oC to +150 ^oC
-55 ^oC to +175 ^oC
NOTE:
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C