LHC Datasheet, PDF (1/2 Pages) Electronic devices inc. – HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS

LHC RHC
HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 40,000 VOLTS
FAST RECOVERY (RHC SERIES)
LOW LEAKAGE
EDI Type No.
Avg.
Fwd. Current,
IO at 50 ^OC
25mA
LHC25-8
-10
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
Peak
Reve rse V olta ge
PRV (V olts )
8, 000
10,0 00
12,0 00
15,0 00
20,0 00
25,000
30,0 00
35,0 00
40,0 00
Max . Fwd. Volta ge
Drop at 25 ^o C And IO
VF (Vol ts)
30
30
30
60
60
60
90
90
90
Case Sty le
A
A
A
B
B
B
C
C
C
RHC25-8
-1 0
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,0 00
30,0 00
35,0 00
40,0 00
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 ^oC, I_R
Max. DC Reverse Current @ PRV and 100 ^oC, I_R
Ambient Operating Temperature Range,T_A
Storage Temperature Range, T_STG
Max.One-Half Cycle Surge Current, I _FM
(Surge )@ 60Hz
LHC SERIES
STANDARD
RECOVERY
1^A
40 ^A
-55 ^oC to +150^oC
-55 ^oC to +150^oC
3 Amps
30
A
30
A
30
A
60
B
60
B
60
B
90
C
90
C
90
C
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 ^oC, I_R
Max. DC Reverse Current @ PRV and 100 ^oC, I_R
Max. Reverse Recovery Time , t rr (Fig.4)
Ambient Operating Temperature Range,T_A
Storage Temperature Range, T_STG
Max.One-HalfCycle Surge Current, I_FM
(Surge )@ 60Hz
RHC SERIES
FAST
RECOVERY
1^A
60 ^A
100 nanosec
-55 ^oC to +125^oC
-55 ^oC to +150^oC
3 Amps
NOTES:
1. Maximum lead and terminal temperature for soldering, 3/8 inch from case, 5 seconds at 250 ^o C.
2. If operated over 10,000 v/inch in length, devices should be immersed in oil or re-encapsulated.
EDI reserves the right to change these specifications at any time without notice.