HTD3 Datasheet, PDF (1/2 Pages) Electronic devices inc. – High Temperature High Voltage Rectifier Diodes

HTD 3
200 ^OC High Temperature
High Voltage Rectifier Diodes
Exceptional high temperature Stability
Uup t o 20 0 ^OC
Exceptionally low leakage
Small size
3 KV P RV
Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated
temperatures. All diodes are subjected to 10 test temperature cycles from -55 ^OC to + 200^OC.
EDI TYPE NO.
HTD 3
PEAK REVERSE VOL TAGE
3,000V
DIMENSIONS
See Fig.3
ELECTRICAL CHARACTERISTICS (at TA =25 ^OC Unless Otherwise Specified)
Average Rectified Forward Current, @ 50 ^O C IO
Average Rectified Forward Current, @ 200 ^O C IO
Max. DC Reverse Current @ PRV @ 25 ^OC, I_R
Max. DC Reverse Current @ PRV @ 200 ^OC,I_R (See Note:1)
50 mA
1 mA
0.1 A
30 A max
18 _A typical
Max. Forward Voltage Drop at 25^O C and 10mA ,VF (Volts)
Forward Stability Tj 200 ^OC
Ambient Operating Temperature Range
25 V
See Note 2
-55 ^OC to+200 ^OC
Storage Temperature Range,T
-55 ^OC to+200 ^OC
Note1 I_R at 200^OC readings are taken in oil after voltage
has been applied to device for 5 minutes.
Note 2
All diodes are hot forward swept for forward
stability to maximum temperature of 200 ^OC on
dynamic display on curve trace oscilloscope.
EDI reserves the rightto change these specifications at any time without notice.