English
Language : 

3W2 Datasheet, PDF (1/2 Pages) Electronic devices inc. – HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES
3W 3RW
HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY
SILICON RECTIFIER DIODES
Up to 250 ns max. recovery
Small size
Exceptionally low leakage
Avalanche characteristics
EDI
Typ e
PRV
Voits
REVERSE RECOVERY TIME
(Fig.4)
3W2
3W2.5
3W3
3RW2
3RW2.5
3RW3
2,000
2,500
3,000
2,000
2,500
3,000
Not applicable
Not applicable
Not applicable
250 ns max.
250 ns max.
250 ns max.
ELECTRICAL CHARACTERISTICS(at TA=25°C Unless Otherwise Specified)
ELECTRICAL CHARACTERISTICS
3W
SERIES 3RW SERIIES
Average Rectified Forward Current @ 50 oC, IO (Fig.1)
2 Amp
1.5 Amp
Max. Peak Surge Cureent,IFSM (8.3 ms) (Fig.2)
Max.Forward Voltage Drop @ 2.0 A, VF
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and100oC, IR
Ambient Operating Temperature Range,TA
Storage Temperature Range,TSTG
300 Amp
200 Amp
3VDC max.
4VDC max.
5A
10 A
150 A
200 A
-55 oC to +150 oC -55 oC to +125 oC
-55 oC to +150 oC
NOTES:It is recommemded that a proper heat sink be used on the terminals of this device
between the body and soldering point to prevent damage from excess heat.
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 OC
EDI reserves the right to change these specifications at any time without notice.