ECSD5VD2510 Datasheet, PDF (1/3 Pages) E-CMOS Corporation – Ultra Low Capacitance ESD TVS Array

Ultra Low Capacitance ESD TVS Array
ECSD5VD2510
Features
■ 180Watts peak pulse power (tp = 8/20μs)
■ DFN2510 package
■ Solid-state silicon-avalanche technology
■ Low clamping voltage
■ Low leakage current
■ Ultra low capacitance (0.2pF typical I/O to I/O)
■ ESD Protection for high-speed data lines to:
IEC 61000-4-2 ±25KV contact ±25KV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 7A (8/20μs)
■ RoHS compliant
Application
■ USB 3.0, USB 2.0, MHL
■ HDMI 2.0, Display Port 1.3, eSATA
■ Unified Display Interface (UDI)
■ Digital Visual Interface (DVI)
■ High speed serial interfaces
Absolute Maximum Ratings
(TA=25℃, Unless otherwise specified.)
Parameter
Peak Pulse Power (TP=8/20μS)
Peak Pulse Current ( tP = 8/20μS )
Junction Temperature
Storage temperature
Symbol
PPP
IPP
TJ
TSTG
Schematic Diagram
Value
Unit
180
W
7
A
-55 to +125
℃
-55 to +150
℃
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 3
5G03N Rev.F001