EC772320W Datasheet, PDF (1/4 Pages) E-CMOS Corporation – 20V N-Channel MOSFETs

20V N-Channel MOSFETs
EC772320W
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
fast switching applications.
Features
■ 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
■ Worldwide Smallest Package : 1x0.6x0.45 mm
■ Fast switching
■ Green Device Available
■ Suit for 1.2V Gate Drive Applications
■ 2KV HBM ESD Capability
Application
■ Notebook
■ Smartphone
■ Battery Protection
■ Hand-held Instruments
BVDSS
20V
RDSON
350m
ID
500mA
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25℃)
Drain Current – Continuous (TC=100℃)
Drain Current – Pulsed ¹
Power Dissipation (TC=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±8
500
320
1000
155
1.25
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
mW
mW/℃
℃
℃
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
800
Unit
℃ /W
E-CMOS Corp. (www.ecmos.com.tw)
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5C11N-Rev.F001