EC747N65 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – 650V,7A N-Channel Power MOSFET

650V,7A N-Channel Power MOSFET
Features
◆ 650V, 7A, R_DS(ON)(Max.) = 1.2Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Adapter
LCD Panel Power
Switching Mode Power Supply
E-Bike Charger
EC747N65
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Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
EAS
TJ,TSTG
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25℃
Drain Current-Continuous, TC =100℃
Drain Current-Pulsed ^b
Maximum Power Dissipation ＠ TJ=25℃
Single Pulsed Avalanche Energy ^c
Operating and Store Temperature Range
Limit
TO-220
TO-263
Unit
TO-220F
650
V
±30
V
7
A
4.2
A
28
A
125
40
W
195
mJ
-55 to 150
℃
Thermal Characteristics
Symbol
R JC
R JA
Parameter
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
Value
1
3.1
63
Unit
℃/W
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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4J06N-Rev.F001